BFN 19 H6327

BFN19 PNP Silicon High-Voltage Transistors • Suitable for video output stages in TV sets 1 2 and switching power supplies 3 2 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN18 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking BFN19 DH Pin Configuration 1=B 2=C Package SOT89 3=E Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 300 Collector-base voltage VCBO 300 Emitter-base voltage VEBO 5 Collector current IC 200 Peak collector current, tp ≤ 10 ms ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 1 W 150 °C V mA TS ≤ 130 °C Junction temperature Tj Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS -65 ... 150 Value ≤ 20 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2011-09-30 BFN19 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 300 Unit V IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 300 - - V(BR)EBO 5 - - IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector-base cutoff current µA ICBO VCB = 250 V, IE = 0 - - 0.1 VCB = 250 V, IE = 0 , TA = 150 °C - - 20 - - 100 Emitter-base cutoff current IEBO nA VEB = 5 V, IC = 0 DC current gain1) - hFE IC = 1 mA, VCE = 10 V 25 - - IC = 10 mA, VCE = 10 V 40 - - IC = 30 mA, VCE = 10 V 30 - - VCEsat - - 0.5 VBEsat - - 0.9 fT - 100 - MHz Ccb - 2.5 - pF Collector-emitter saturation voltage1) V IC = 20 mA, IB = 2 mA Base emitter saturation voltage1) IC = 20 mA, IB = 2 mA AC Characteristics Transition frequency IC = 20 MHz, VCE = 10 V, f = 20 MHz Collector-base capacitance VCB = 30 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% 2 2011-09-30 BFN19 DC current gain hFE = ƒ(IC) VCE = 10 V 10 3 Operating range IC = ƒ(VCEO) TA = 25°C, D = 0 BFN 17/19 10 3 EHP00592 5 10 µs h FE 10 2 10 2 100 µs 5 10 1 1 ms 2 DC 10 1 10 0 5 10 0 -1 10 5 10 0 5 10 1 Collector current IC = ƒ(VBE ) BFN 17/19 10 1 10 2 10 3 Collector cutoff current ICBO = ƒ(TA) VCBO = 200 V VCE = 10V 10 3 10 -1 0 10 5 10 2 mA 10 3 ΙC EHP00589 10 4 nA mA ΙC Ι CBO 10 2 BFN 17/19 EHP00591 max 10 3 5 5 10 2 5 10 1 5 typ 10 1 5 10 0 10 0 5 5 10 -1 0 0.5 V 1.0 10-1 1.5 V BE 0 50 ˚C 100 150 TA 3 2011-09-30 BFN19 Transition frequency fT = ƒ(IC) VCE = 10 V 10 3 Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) BFN 17/19 90 EHP00590 pF MHz CCB(CEB ) fT 70 60 50 10 2 40 CEB 5 30 20 10 CCB 10 1 10 0 5 10 1 5 10 2 mA 5 10 0 0 3 4 8 12 16 V 22 VCB(VEB ΙC Total power dissipation P tot = ƒ(TS) Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) 1.2 10 3 BFN 17/19 Ptot max 5 Ptot DC W EHP00588 tp D= T tp Ptot T 10 2 0.8 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 0.6 10 1 0.4 5 0.2 0 0 15 30 45 60 75 90 105 120 °C TS 10 0 10 -6 150 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2011-09-30 Package SOT89 BFN19 Package Outline 4.5 ±0.1 45˚ B 1.5 ±0.1 1) 1.6 ±0.2 0.2 MAX. 2 2.75 +0.1 -0.15 10˚ MAX. 1 ±0.2 1 0.15 4 ±0.25 1 ±0.1 1) 2.5 ±0.1 0.25 ±0.05 3 1.5 0.35 ±0.1 0.45 +0.2 -0.1 3 0.15 M B x3 0.2 B 1) Ejector pin markings possible Foot Print 1.2 1.0 2.5 2.0 0.8 0.8 0.7 Marking Layout (Example) BAW78D Type code Pin 1 2005, June Date code (YM) Manufacturer Standard Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 0.2 4.6 12 8 Pin 1 4.3 5 1.6 2011-09-30 BFN19 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2011-09-30